Neslihan Ayarcı Kuruoğlu

Akademik Profiller

1. 1
   Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structureJournal of Luminescence
   2023
2. 2
   Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurementsJournal of Luminescence
   2023
3. 3
   Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currentsJournal of Materials Science: Materials in Electronics
   2022
4. 4
   MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesiIğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
   2022
5. 5
   Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p–i–n structureJournal of Physics D: Applied Physics
   2019
6. 6
   Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devicesJournal of Physics D: Applied Physics
   2019
7. 7
   Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurementJournal of Physics D: Applied Physics
   2017
8. 8
   Betavoltaic study of a GaN p-i-n structure grown by metal-organic vapour phase epitaxy with a Ni-63 sourceThin Solid Films
   2017
9. 9
   Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance SpectroscopyIEEE Transactions on Electron Devices
   2017

Yayın listesi ORCID kaydından alındı.