Esra Erbilen Tanrıkulu

Akademik Profiller

1. 1
   Incorporation of chromium nanostructures into PVC interlayer to improve electrical features of Au/n-Si schottky diodesPhysica Scripta
   2025
2. 2
   The investigation of main electrical parameters, energy dependent profiles of surface states and their lifetimes in the Au/n-Si Schottky diodes with (PVA-Fe3O4) interlayer depend on frequency and voltagePhysica Scripta
   2025
3. 3
   Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance methodPhysica B: Condensed Matter
   2024
4. 4
   Dielectric properties of MS diodes with Ag:ZnO doped PVP interfacial layer depending on voltage and frequencyMaterials Chemistry and Physics
   2023
5. 5
   Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO InterfaceJournal of Electronic Materials
   2023
6. 6
   Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interfacePhysica Scripta
   2023
7. 7
   Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayersJournal of Materials Science: Materials in Electronics
   2023
8. 8
   On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High FrequenciesJournal of Electronic Materials
   2022
9. 9
   On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C(29)H(32)O17)/p-Si (MPS) structures in wide range of frequency and voltagePhysica B: Condensed Matter
   2021
10. 10
    Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance MethodIğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
    2019

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