Today : Mar 12, 2025
Science
12 March 2025

New Insights Into Thermomigration Effects On Micro-Joints

Study highlights intermetallic compound growth and mechanical properties of solder joints under thermal gradients.

Understanding the reliability of microelectronic devices is becoming increasingly important as modern technology demands higher performance from smaller components. A pivotal factor leading to failure in these devices is thermomigration, the migration of atoms within solder materials under temperature gradients. Recently, researchers have delved deep to dissect the microstructure and properties of electroless Ni–P/Sn2.5Ag0.7Cu0.1RE micro-joints during thermomigration, providing valuable insights on intermetallic compound (IMC) formation and mechanical integrity.

The study, conducted by R.Q. Hou and K.K. Zhang among others, focused on micro-joints fabricated using electroless nickel-phosphorus (Ni-P) plating on copper substrates. This plating method forms diffusion barriers, minimizing adverse reactions with solder materials. Investigations revealed changes at the solder interface under variable conditions, highlighting the challenge posed by thermomigration.

One of the study's major findings is the variation of IMC structures, which showed both needle-shaped and block-shaped formations of (Ni, Cu)3Sn4 within the Ni-P/solder transition zone. These IMCs averaged between 1.1 to 1.5 μm thickness initially, but their growth dynamics underwent significant changes depending on temperature gradients applied during thermomigration tests.

Temperature gradients of 450 °C/cm, 550 °C/cm, and 650 °C/cm were set across the micro-solder joints, with subsequent observation of microstructural alterations. A poignant indication of this dynamic was the evolution of the Ni-P layer, which transitioned through two stages: the initial conversion of Ni-P to Ni3P, followed by the combination of Ni3P with solder to form Ni–Sn–P compounds. The cold end demonstrated faster structural evolution compared to the hot end during these experiments, underscoring the impact of temperature on solder joint integrity.

Notably, after 140 hours under the highest temperature gradient, the IMC region at the cold end thickened significantly to 14.8 μm, which is 12.5 μm more than the thickness observed at the hot end. This asymmetrical growth stresses the importance of precise temperature management within solder joint applications.

Shear testing pointed to decreasing performance under thermomigration conditions, with sheer forces diminishing from 16N initially. Importantly, shear fracture positions changed over time—from occurring at the soldering seam to interfacial areas between layers, indicating reduced structural integrity under prolonged thermomigration. The authors noted, "the shear fracture position of the micro-solder joint shifts from the soldering seam to the Ni–Sn–P/IMC layer junction," emphasizing the need to monitor these transitions closely.

With regards to fracture modes, the early stages of failure were ductile, illustrated by dimple patterns on fracture surfaces. Over time, these evolved to brittle fractures characterized by cleavage and slip steps as the solder joint degraded, evident through the statement: "the fracture mode changes from ductile fracture dominated by dimples to brittle fracture dominated by cleavage and slip steps." Such insights provide significant information about the life expectancy of micro solder joints, critically linking their performance with thermomigration phenomena.

The research unveils the inherent complications intertwined with modern micro-electronic packaging, especially as devices continue to miniaturize and integrate more functions. The nature of thermomigration and its ramifications on interfacial adhesion and compound growth is underlined as vitally relevant data for engineers and designers alike.

This study does not only provide theoretical insights but also serves as groundwork for future modifications and innovations within solder joint technologies. Understanding thermomigration and addressing its consequences could translate to more reliable electronic devices capable of withstanding the rigors of performance demands.